Mock Test 1 — Semiconductor Electronics

Forbidden gap of an insulator is typically:

P-type semiconductor is formed by doping Si with:

Reverse saturation current of a Si diode is typically:

Ripple factor of full-wave rectifier:

Maximum efficiency of half-wave rectifier:

In a CE configuration, $\beta = 100$, $I_E = 10.1$ mA. $I_B$:

The truth table of an OR gate:

NPN transistor in CE: input current $I_B = 50\,\mu$A, $\beta = 100$. Output current $I_C$:

The barrier potential of a junction increases when:

The output of two-input NAND with both inputs $0$:

In NPN transistor, $\beta = 99$. Value of $\alpha$ to $2$ decimal places, multiplied by $100$:

Number of diodes in a bridge rectifier:

Output of: $Y = \overline{A + B}$ where $A = 0, B = 0$:

Assertion (A): In an N-type semiconductor, the majority carriers are electrons. Reason (R): Pentavalent dopants donate one extra electron per atom to the lattice.

Assertion (A): A photodiode is operated in reverse bias. Reason (R): In reverse bias, change in current due to incident light is more prominent than in forward bias.